Nano-structured thin films growth in stochastic plasma-condensate systems

Atomic Transport in Nano-crystalline Thin Films

Ge and B diffusion was studied in nano-crystalline Si, and Pd and Si self-diffusion was studied in nano-crystalline Pd2Si during and after Pd/Si reactive diffusion. These experiments showed that grain boundary (GB) diffusion kinetic is the same in microand nano-GBs, whereas triple junction (TJ) diffusion is several orders of magnitude faster than GB diffusion. In addition, GB segregation and GB...

Hydrophilicity of Silica Nano-Porous Thin Films: Calcination Temperature Effects

In this research work, silica nano-porous thin films were deposited on glass substrates by layer by layer method. The thin films were calcinated at various calcination temperatures (200, 300, 400, and 500 °C). The morphology, surface characteristics, surface roughness and hydrophilic properties of the thin films were investigated by field emission scanning electron microscopy, attenuated total ...

Epitaxial growth of thin films

The term ‘epitaxial’ is applied to a film grown on top of the crystalline substrate in ordered fashion that atomic arrangement of the film accepts crystallographic structure of the substrate. Epitaxial growth is one of the most important techniques to fabricate various ‘state of the art’ electronic and optical devices. Modern devices require very sophisticated structure, which are composed of t...

Epitaxial Growth of Thin Films

This chapter gives an introduction to the epitaxial growth of thin films on solid substrates. The term epitaxy refers to the growth of a crystalline layer on (epi) the surface of a crystalline substrate, where the crystallographic orientation of the substrate surface imposes a crystalline order (taxis) onto the thin film. This implies that film elements can be grown, up to a certain thickness, ...

Competitive Phase Growth in Stressed Thin Films